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  Datasheet File OCR Text:
 SMD Type
PNP Silicon Epitaxial Transistor 2SB799
Transistors
Features
World standard miniature package:SOT-89 Low collector saturation voltage:VCE(sat)<-0.4V(IC=-500mA,IB=-50mA)
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current(Pulse) * Total power dissipation Junction temperature Storage temperature range * PW 10ms,duty cycle 50%. Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating -60 -50 -5 -0.7 -1.0 2 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW 350 is, duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = -60 V, IE = 0 VEB = -5.0 V, IC = 0 VCE = -1.0 V, IC = -100 mA VCE = -1.0 V, IC = -500 mA VCE(sat) IC = -500mA, IB = -50mA VBE(sat) IC = -500mA, IB = -50mA VBE fT Cob VCE = -6.0 V, IC = -10 mA VCE = -6.0 V, IE = 10 mA VCB = -6.0 V, IE = 0 , f = 1.0 MHz -600 90 50 200 120 -0.16 -0.9 -630 120 25 -0.4 -1.2 -700 V V mV MHz pF Min Typ Max -100 -100 400 Unit nA nA
hFE Classification
Marking hFE MM 90 180 ML 135 270 MK 200 400
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